 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FMB2227A Discrete Power & Signal Technologies FMB2227A C2 E1 C1 Package: SuperSOT-6 Device Marking: .001 Note: The " . " (dot) signifies Pin 1 B2 E2 B1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP). Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC PD TSTG TJ RJA Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation @Ta = 25C* Storage Temperature Range Junction Temperature TA = 25C unless otherwise noted Value 30 60 5 500 0.7 -55 to +150 150 180 Units V V V mA W C C C/W Thermal Resistance, Junction to Ambient Electrical Characteristics Symbol BVCEO BVCBO BVEBO Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage TA = 25C unless otherwise noted Test Conditions Ic = 10 mA Ic = 10 uA Ie = 10 uA Min 30 60 5 Max Units V V V (c) 1998 Fairchild Semiconductor Corporation Page 1 of 2 2227A.lwpPr19&63(Y1) FMB2227A NPN & PNP Complementary Dual Transistor (continued) Electrical Characteristics Symbol ICBO IEBO hFE Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain TA = 25C unless otherwise noted Test Conditions Vcb = 50V Veb = 3.0V Vce = Vce = Vce = Vce = 10V, 10V, 10V, 10V, Ic = 1.0mA Ic = 10mA Ic = 150mA Ic = 300mA Min Max 30 30 Units nA nA - 50 75 100 30 0.4 1.4 1.3 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Ic = 150mA, Ib=15mA Ic = 300mA, Ib=30mA Base-Emitter Saturation Voltage Ic = 150mA, Ib=15mA V V Small - Signal Characteristics COB CIB fT Output Capacitance Input Capacitance Current Gain - Bandwidth Product Vcb = 10V, f = 1.0MHz Veb = 0.5V, f = 100kHz Vce = 20V, Ic = 50mA, f = 100MHz Typical 6 20 250 pF pF MHz (c) 1998 Fairchild Semiconductor Corporation Page 2 of 2 2227A.lwpPr19&63(Y1) |
Price & Availability of FMB2227A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |